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2SK2469-01MR Datasheet(PDF) 2 Page - Fuji Electric

Part No. 2SK2469-01MR
Description  N-channel MOS-FET
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Maker  FUJI [Fuji Electric]
Homepage  http://www.fujielectric.co.jp/eng/fdt/scd
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2SK2469-01MR Datasheet(HTML) 2 Page - Fuji Electric

   
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N-channel MOS-FET
2SK2469-01MR
300V
1Ω
5A
30W
FAP-II Series
> Characteristics
Typical Output Characteristics
Drain-Source On-State Resistance
Typical Transfer Characteristics
ID=f(VDS); 80µs pulse test; TC=25°C
RDS(on) = f(Tch); ID=2,5A; VGS=10V
ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C
1
2
3
VDS [V]
Tch [°C]
VGS [V]
Typical Drain-Source On-State-Resistance
Typical Transconductance
Gate Threshold Voltage
RDS(on)=f(ID); 80µs pulse test; TC=25°C
gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C
VGS(th)=f(Tch); ID=1mA; VDS=VGS
4
5
6
ID [A]
ID [A]
Tch [°C]
Typical Capacitances
Typical Gate Charge Characteristics
Forward Characteristics of Reverse Diode
C=f(VDS); VGS=0V; f=1MHz
VGS=f(Qg); ID=5A
IF=f(VSD); 80µs pulse test
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Power Dissipation
Safe Operation Area
PD=f(Tc)
ID=f(VDS): D=0,01, Tc=25°C
Transient Thermal impedance
10
12
Zthch-c=f(t) parameter:D=t/T
Tc [°C]
VDS [V]
t [s]
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98


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