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IRF7478QTRPBF Datasheet(PDF) 1 Page - International Rectifier |
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IRF7478QTRPBF Datasheet(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 06/27/14 IRF7478QPbF HEXFET® Power MOSFET Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.6 A IDM Pulsed Drain Current 56 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 3.7 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Notes through are on page 8 SO-8 Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A VDSS RDS(on) max (mW) ID 60V 26@VGS = 10V 4.2A 30@VGS = 4.5V 3.5A Symbol Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 RθJA Junction-to-Ambient ––– 50 °C/W Thermal Resistance l Advanced Process Technology l Ultra Low On-Resistance l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free Description These HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. END OF LIFE Form Quantity IRF7478QTRPbF SO-8 Tape and Reel 4000 EOL 529 IRF7478QPbF SO-8 Tube 95 EOL 529 IRF7478QPbF Please search the EOL part number on IR’s website for guidance Base part number Package Type Standard Pack EOL Notice Orderable part number Replacement Part Number PD- 96128B |
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