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AS098C40W Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH |
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AS098C40W Datasheet(HTML) 1 Page - Roithner LaserTechnik GmbH |
1 / 2 page 20.09.2010 AS098C40W 1 of 2 AS098C40W TECHNICAL DATA High Power Stacked Infrared Laser Diode Array Features Applications • Output Power: 40 W • 920-980 nm Emission Wavelength • Spectral Width: ≤4 nm • High Reliability, High Efficiency • CW stack arrays adopt micro-channel package • Laser Pumping • Medical Usage • High power laser diode applications Specifications (25°C) Item Symbol Value Unit Optical Specifications CW Output Power PO 40 W Output Power / Bar PS 20 W Array Length L 10 mm Center Wavelength λC 920-980 nm Wavelength Tolerance ± 5 nm Spectral Width Δλ ≤ 4 nm Package Style Micro Channel Bar Length 1.6 mm Number of Bars 2 Wavelength Temperature Coefficient 0.3 nm/°C Beam Divergence θ┴×θ║ 40x8 deg Electrical Specifications Slope Efficiency ES ≥ 0.8 W/A Conversion Efficiency NS ≥ 30% Threshold Current ITH ≤ 10 A Operating Current IF ≤ 30 A Operating Voltage UF ≤ 4 V Absolute Maximum Ratings Reverse Voltage UR 2.5 V Operating Temperature TOP +10 … +40 °C Storage Temperature TSTG -40 ... +85 °C |
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