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2SK2248-01S Datasheet(PDF) 1 Page - Fuji Electric

Part No. 2SK2248-01S
Description  N-channel MOS-FET
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Manufacturer  FUJI [Fuji Electric]
Direct Link  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK2248-01S Datasheet(HTML) 1 Page - Fuji Electric

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2SK2248-01L,S
N-channel MOS-FET
F-III Series
30V
0,06Ω 10A
20W
> Features
> Outline Drawing
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Forward Transconductance
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
30
V
Drain-Gate Voltage (RGS=20K
Ω)
V DGR
30
V
Continous Drain Current
I D
10
A
Pulsed Drain Current
I D(puls)
40
A
Gate-Source-Voltage
V GS
±16
V
Max. Power Dissipation
P D
20
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
-
Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
V (BR)DSS
ID=1mA
VGS=0V
30
V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
1,0
1,5
2,0
V
Zero Gate Voltage Drain Current
I DSS
VDS=30V
Tch=25°C
10
500
µA
VGS=0V
Tch=125°C
0,2
1,0
mA
Gate Source Leakage Current
I GSS
VGS=±16V
VDS=0V
10
100
nA
Drain Source On-State Resistance
R DS(on)
ID=5A
VGS=4V
0,045
0,080
ID=5A
VGS=10V
0,035
0,060
Forward Transconductance
g fs
ID=5A
VDS=10V
5
10
S
Input Capacitance
C iss
VDS=25V
900
1350
pF
Output Capacitance
C oss
VGS=0V
600
900
pF
Reverse Transfer Capacitance
C rss
f=1MHz
160
240
pF
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=10V
10
15
ns
t r
ID=10A
15
25
ns
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
110
170
ns
t f
RGS=25
60
90
ns
Avalanche Capability
I AV
L=100µH
Tch=25°C
10
A
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
1,0
1,5
V
Reverse Recovery Time
t rr
IF=IDR VGS=0V
35
ns
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
0,05
µC
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R th(ch-a)
channel to air
°C/W
R th(ch-c)
channel to case
6,25
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com


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