2SK2248-01S datasheet(1/2 Pages) FUJI

Part #	2SK2248-01S

Description	N-channel MOS-FET

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Manufacturer	FUJI [Fuji Electric]

Direct Link	http://www.fujielectric.co.jp/eng/fdt/scd

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2SK2248-01L,S

N-channel MOS-FET

F-III Series

30V

0,06Ω 10A

20W

> Features

> Outline Drawing

-

High Current

-

Low On-Resistance

-

No Secondary Breakdown

-

Low Driving Power

-

High Forward Transconductance

> Applications

-

Motor Control

-

General Purpose Power Amplifier

-

DC-DC converters

> Maximum Ratings and Characteristics

> Equivalent Circuit

-

Absolute Maximum Ratings (TC=25°C), unless otherwise specified

Item

Symbol

Rating

Unit

Drain-Source-Voltage

V DS

30

V

Drain-Gate Voltage (RGS=20K

Ω)

V DGR

30

V

Continous Drain Current

I D

10

A

Pulsed Drain Current

I D(puls)

40

A

Gate-Source-Voltage

V GS

±16

V

Max. Power Dissipation

P D

20

W

Operating and Storage Temperature Range

T ch

150

°C

T stg

-55 ~ +150

°C

-

Electrical Characteristics (TC=25°C), unless otherwise specified

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown-Voltage

V (BR)DSS

ID=1mA

VGS=0V

30

V

Gate Threshhold Voltage

V GS(th)

ID=1mA

VDS=VGS

1,0

1,5

2,0

V

Zero Gate Voltage Drain Current

I DSS

VDS=30V

Tch=25°C

10

500

µA

VGS=0V

Tch=125°C

0,2

1,0

mA

Gate Source Leakage Current

I GSS

VGS=±16V

VDS=0V

10

100

nA

Drain Source On-State Resistance

R DS(on)

ID=5A

VGS=4V

0,045

0,080

Ω

ID=5A

VGS=10V

0,035

0,060

Ω

Forward Transconductance

g fs

ID=5A

VDS=10V

5

10

S

Input Capacitance

C iss

VDS=25V

900

1350

pF

Output Capacitance

C oss

VGS=0V

600

900

pF

Reverse Transfer Capacitance

C rss

f=1MHz

160

240

pF

Turn-On-Time ton (ton=td(on)+tr)

t d(on)

VCC=10V

10

15

ns

t r

ID=10A

15

25

ns

Turn-Off-Time toff (ton=td(off)+tf)

t d(off)

VGS=10V

110

170

ns

t f

RGS=25

Ω

60

90

ns

Avalanche Capability

I AV

L=100µH

Tch=25°C

10

A

Diode Forward On-Voltage

V SD

IF=2xIDR VGS=0V Tch=25°C

1,0

1,5

V

Reverse Recovery Time

t rr

IF=IDR VGS=0V

35

ns

Reverse Recovery Charge

Q rr

-dIF/dt=100A/µs Tch=25°C

0,05

µC

-

Thermal Characteristics

Item

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Thermal Resistance

R th(ch-a)

channel to air

°C/W

R th(ch-c)

channel to case

6,25

°C/W

Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com

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