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IRF1902TRPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRF1902TRPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF1902PbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 2.5A, VGS = 0V trr Reverse Recovery Time ––– 38 57 ns TJ = 25°C, IF = 2.5A Qrr Reverse Recovery Charge ––– 42 63 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics A 17 4.2 Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in square Cu board Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.019 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 85 VGS = 4.5V, ID = 4.0A ––– ––– 170 VGS = 2.7V, ID = 3.2A VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 5.6 ––– ––– S VDS = 10V, ID = 4.0A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 25 VDS = 16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V Qg Total Gate Charge ––– 5.0 7.5 ID = 4.2A Qgs Gate-to-Source Charge ––– 1.2 ––– nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 1.8 ––– VGS = 4.5V td(on) Turn-On Delay Time ––– 5.9 ––– VDD = 10V tr Rise Time ––– 13 ––– ID = 1.0A td(off) Turn-Off Delay Time ––– 23 ––– RG = 53Ω tf Fall Time ––– 19 ––– VGS = 4.5V Ciss Input Capacitance ––– 310 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 55 ––– ƒ = 1.0MHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns S D G |
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