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2SK1986-01 Datasheet(PDF) 1 Page - Fuji Electric

Part No. 2SK1986-01
Description  N-channel MOS-FET
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Maker  FUJI [Fuji Electric]
Homepage  http://www.fujielectric.co.jp/eng/fdt/scd
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2SK1986-01 Datasheet(HTML) 1 Page - Fuji Electric

   
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2SK1986-01
N-channel MOS-FET
FAP-IIA Series
1000V
3,6Ω
4A
80W
> Features
> Outline Drawing
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
VGS = ± 30V Guarantee
-
Avalanche Proof
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
> Equivalent Circuit
-
Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Unit
Drain-Source-Voltage
V DS
1000
V
Drain-Gate-Voltage (RGS=20K
Ω)
V DGR
1000
V
Continous Drain Current
I D
4
A
Pulsed Drain Current
I D(puls)
16
A
Gate-Source-Voltage
V GS
±30
V
Max. Power Dissipation
P D
80
W
Operating and Storage Temperature Range
T ch
150
°C
T stg
-55 ~ +150
°C
-
Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown-Voltage
V (BR)DSS
ID=1mA
VGS=0V
1000
V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
2,5
3,0
3,5
V
Zero Gate Voltage Drain Current
I DSS
VDS=1000V
Tch=25°C
10
500
µA
VGS=0V
Tch=125°C
0,2
1,0
mA
Gate Source Leakage Current
I GSS
VGS=±30V
VDS=0V
10
100
nA
Drain Source On-State Resistance
R DS(on)
ID=2A
VGS=10V
2,7
3,6
Forward Transconductance
g fs
ID=2A
VDS=25V
2
5
S
Input Capacitance
C iss
VDS=25V
1300
1950
pF
Output Capacitance
C oss
VGS=0V
100
150
pF
Reverse Transfer Capacitance
C rss
f=1MHz
35
55
pF
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=600V
20
30
ns
t r
ID=4A
15
25
ns
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
85
130
ns
t f
RGS=10
20
30
ns
Avalanche Capability
I AV
L = 100µH
Tch=25°C
4
A
Continous Reverse Drain Current
I DR
4
A
Pulsed Reverse Drain Current
I DRM
16
A
Diode Forward On-Voltage
V SD
IF=2xIDR VGS=0V Tch=25°C
1,1
1,65
V
Reverse Recovery Time
t rr
IF=IDR VGS=0V
400
ns
Reverse Recovery Charge
Q rr
-dIF/dt=100A/µs Tch=25°C
3
µC
-
Thermal Characteristics
Item
Symbol
Test conditions
Min.
Typ.
Max.
Unit
Thermal Resistance
R th(ch-a)
channel to air
75
°C/W
R th(ch-c)
channel to case
1,56
°C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com


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