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BU407D Datasheet(PDF) 1 Page - Savantic, Inc. |
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BU407D Datasheet(HTML) 1 Page - Savantic, Inc. |
1 / 3 page SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching speed ·Low saturation voltage ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolut maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT BU406D 400 VCBO Collector-base voltage BU407D Open emitter 330 V BU406D 200 VCEO Collector-emitter voltage BU407D Open base 150 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 7 A ICM Collector current-Peak 10 A IB Base current 4 A Ptot Total power dissipation TC=25 60 W Tj Maximum operating junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance junction to case 2.08 /W |
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