© Semiconductor Components Industries, LLC, 2005

August, 2005 − Rev. 4

1

Publication Order Number:

NTD24N06/D

NTD24N06

Power MOSFET

60 Volt, 24 Amp

N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

Features

Typical Applications

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

60

Vdc

60

Vdc

Gate−to−Source Voltage

− Continuous

"20

"30

Vdc

Drain Current

24

27

19

80

Adc

Adc

Adc

Apk

Derate above 25

°C

62.5

0.42

1.88

1.36

W

W/

°C

W

W

Operating and Storage Temperature Range

−55 to

+175

°C

Single Pulse Drain−to−Source Avalanche

162

mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

2.4

80

110

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.

2. When surface mounted to an FR−4 board using the minimum recommended

pad size.

N−Channel

D

S

G

http://onsemi.com

60 V

32 m

W

24 A

1

Gate

3

Source

2

Drain

4

Drain

DPAK

CASE 369C

(Surface Mount)

STYLE 2

MARKING DIAGRAMS

& PIN ASSIGNMENTS

1 2

3

4

1

Gate

3

Source

2

Drain

4

Drain

DPAK

CASE 369D

(Straight Lead)

STYLE 2

1

2

3

4

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

Y

= Year

WW

= Work Week

24N06

= Device Code

G

= Pb−Free Package