Storage Temperature ................................................ –65°C to +150°C

Ambient Temperature with Power Applied ............... –40°C to +85°C

Supply Voltage to Ground Potential ........................... –0.5V to +4.6V

DC Input Voltage ........................................................ –0.5V to +Vcc

DC Output Current................................................................... 120mA

Power Dissipation ....................................................................... 0.5W

Maximum Ratings

(Above which the useful life may be impaired. For user guidelines, not tested.)

DC Electrical Characteristics, 3.3V Supply

Parameters

Description

Test Conditions

Min. Typ.

Max. Units

Input HIGH Voltage

Guaranteed Logic HIGH Level

2.0

V

Input LOW Voltage

Guaranteed Logic LOW Level

0.8

Input HIGH Current

±1

A

Input LOW Current

±1

±1

Switch On-Resistance

10

14

12

16

DC Electrical Characteristics, 2.5V Supply

Parameters

Description

Test Conditions

Min.

Typ.

Max.

Units

Input HIGH Voltage

Guaranteed Logic HIGH Level

1.8

V

Inout LOW Voltage

Guaranteed Logic LOW Level

–0.3

0.8

Input HIGH Current

±1

A

Input LOW Current

±1

High Impedance Current

±1

Switch On Resistance

12

16

14

18

Note:

Stresses greater than those listed under

MAXIMUM RATINGS may cause permanent

damage to the device. This is a stress rating

only and functional operation of the device at

these or any other conditions above those

indicated in the operational sections of this

specification is not implied. Exposure to

absolute maximum rating conditions for

extended periods may affect reliability.

High-Bandwidth, 4-Bit, 2-Port Bus Switch w/ Individual Enables

High Bandwidth Potato Chip

2

01/01/10

Potato Semiconductor Corporation

PO3B3125A

www.potatosemi.com