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BC327 Datasheet(PDF) 1 Page - Continental Device India Limited

Part No. BC327
Description  SILICON PLANAR EPITAXIAL TRANSISTORS
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Maker  CDIL [Continental Device India Limited]
Homepage  http://www.cdilsemi.com
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BC327 Datasheet(HTML) 1 Page - Continental Device India Limited

   
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SILICON PLANAR EPITAXIAL TRANSISTORS
BC327/A BC328 PNP
BC337/A BC338 NPN
TO-92
Plastic Package
General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
Collector Emitter Voltage
VCEO
Collector Emitter Voltage
VCES
Emitter Base Voltage
VEBO
Collector Current Continuous
IC
Collector Current Peak
ICM
Emitter Current Peak
IEM
Base Current Continuous
IB
Base Current Peak
IBM
Power Dissipation at Ta=25ºC
PD
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
THERMAL RESISTANCE
Junction to Ambient in free air
Rth (j-a)
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
VCEO
IC=1mA, IB=0
BC327/337
45
BC327A/337A
60
BC328/338
25
Collector Emitter Voltage
VCES
IC=100µA, IE=0
BC327/337
50
BC327A/337A
60
BC328/338
30
Emitter Base Voltage
VEBO
IE=10µA, IC=0
5.0
Collector Cut Off Current
ICBO
VCB=20V, IE=0
VCB=20V, IE=0, TJ=150 ºC
Emitter Cut Off Current
IEBO
VEB=5V, IC=0
Collector Emitter Saturation Voltage
*VCE (sat)
IC=500mA, IB=50mA
Base Emitter On Voltage
*VBE (on)
IC=500mA, VCE=1V
*Pulse Test: Pulse Width < 300
µµs, Duty Cycle < 2%
BC327_338Rev_3 290606D
V
5
V
- 65 to +150
V
mA
ºC/W
1000
mA
V
0.7
1.2
5
µA
1000
mA
100
mA
200
mA
mW
mW/ºC
800
625
5
MAX
200
10
µA
UNITS
V
V
For Lead Free Parts, Device Part #
will be Prefixed with "T"
BC327/337
BC327A/337A
BC328/338
45
60
25
50
60
30
ºC
UNITS
V
V
100
V
nA
V
V
V
C B
E
Continental Device India Limited
Data Sheet
Page 1 of 5
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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