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BC558C Datasheet(PDF) 1 Page - Continental Device India Limited

Part No. BC558C
Description  PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BC558C Datasheet(HTML) 1 Page - Continental Device India Limited

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PNP SILICON PLANAR EPITAXIAL TRANSISTORS
BC556, A, B,
BC557, A, B, C
BC558, A, B, C
TO-92
Plastic Package
Amplifier Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
SYMBOL
UNITS
Collector Emitter Voltage
VCEO
V
Collector Emitter Voltage
VCES
V
Collector Base Voltage
VCBO
V
Emitter Base Voltage
VEBO
V
Collector Current Continuous
IC
mA
Collector Current Peak
ICM
mA
Base Current Peak
IBM
mA
Emitter Current Peak
IEM
mA
Power Dissipation at Ta=25ºC
PD
mW
Derate Above 25ºC
mW/ºC
Storage Temperature
Tstg
ºC
Junction Temperature
Tj
ºC
THERMAL RESISTANCE
Junction to Ambient in free air
Rth (j-a)
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
BC556
BC558
UNITS
Collector Emitter Voltage
VCEO
IC=2mA, IB=0
>65
>30
V
Collector Base Voltage
VCBO
IC=100µA, IE=0
>80
>30
V
Emitter Base Voltage
VEBO
IE=100µA, IC=0
V
Collector Cut Off Current
ICBO
VCB=30V, IE=0
ALL
nA
VCB=30V, IE=0, Tj=150ºC ALL
µA
Collector Cut Off Current
ICES
VCE=80V, VBE=0
<15
nA
VCE=50V, VBE=0
nA
VCE=30V, VBE=0
<15
nA
VCE=80V, VEB=0, Tj=125ºC
<4.0
µA
VCE=50V, VEB=0, Tj=125ºC
µA
VCE=30V, VEB=0, Tj=125ºC
<4.0
µA
BC556_558Rev_2 201205E
<15
<5.0
<4.0
5
250
100
500
200
150
BC557
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
BC556
BC557
BC558
65
45
30
80
50
30
80
50
30
4.0
- 65 to +150
>45
200
>5.0
200
<15
>50
C B
E
Continental Device India Limited
Data Sheet
Page 1 of 5
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company


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