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BC639NPN Datasheet(PDF) 1 Page - Continental Device India Limited |
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BC639NPN Datasheet(HTML) 1 Page - Continental Device India Limited |
1 / 5 page SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) BC635 BC637 BC636 BC638 UNIT Collector Emitter Voltage VCEO 45 60 V Collector Base Voltage VCBO 45 60 V Emitter Base Voltage VEBO V Collector Current Continuous IC A Total Device Dissipation at Ta=25ºC PD mW Derate Above 25ºC mW/ºC Total Device Dissipation at Ta=25ºC **PD W Total Device Dissipation at Tc=25ºC PD W Derate Above 25ºC mW/ºC Operating And Storage Junction Temperature Range Tj, Tstg ºC THERMAL RESISTANCE Junction to Case Rth (j-c) ºC/W Junction to Ambient in free air Rth (j-a) ºC/W Junction to Ambient **Rth (j-a) ºC/W ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MAX UNIT Collector Emitter Voltage VCEO IC=1mA, IB=0 BC635/BC636 V BC637/BC638 V BC639/BC640 V Collector Base Voltage VCBO IC=100µA, IE=0 BC635/BC636 V BC637/BC638 V BC639/BC640 V Emitter Base Voltage VEBO IE=10µA, IC=0 V Collector Cut Off Current ICBO VCB=30V, IE=0 0.1 µA VCB=30V, IE=0, Ta=125ºC 10 µA Base Emitter (On) Voltage *VBE (on) IC=500mA, VCE=2V 1.0 V Collector Emitter Saturation Voltage *VCE (sat) IC=500mA, IB=50mA 0.5 V *Pulse Test: Pulse Width < 300 µµs, Duty Cycle 2% **Transistors mounted on printed circuit board, max Lead Length 4mm, mounting pad for collector lead min 10mm x 10 mm BC635_BC640Rev_4 030106E BC639 BC640 80 80 MIN 45 For Lead Free Parts, Device Part # will be Prefixed with "T" 1.0 - 55 to +150 45 800 6.4 2.75 80 22 5.0 5.0 DESCRIPTION SYMBOL 60 80 156 1.0 125 45 60 E C B Continental Device India Limited Data Sheet Page 1 of 5 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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