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BC817 Datasheet(PDF) 2 Page - Continental Device India Limited

Part # BC817
Description  SILICON PLANAR EPITAXIAL TRANSISTORS
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Manufacturer  CDIL [Continental Device India Limited]
Direct Link  http://www.cdilsemi.com
Logo CDIL - Continental Device India Limited

BC817 Datasheet(HTML) 2 Page - Continental Device India Limited

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Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
BC817
BC818
Collector–emitter voltage (VBE = 0)
VCES
max.
50
30 V
Collector–emitter voltage (open base)
IC = 10 mA
VCE0
max.
45
25 V
Emitter–base voltage (open collector)
VEB0
max.
5
5 V
Collector current (d.c.)
IC
max.
500
mA
Collector current (peak value)
ICM
max.
1000
mA
Emitter current (peak value)
–IEM max.
1000
mA
Base current (d.c.)
IB
max.
100
mA
Base current (peak value)
IBM
max.
200
mA
Total power dissipation up to Tamb = 25 °C
Ptot
max.
250
mW
Storage temperature
Tstg
–55 to +150
° C
Junction temperature
Tj
max.
150
° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a = 500 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Collector cut–off current
IE = 0; VCB = 20 V; Tj = 25 °C
ICB0
<
100 nA
IE = 0; VCB = 20V; Tj = 150°C
ICB0
<5
µA
Emitter cut–off current
IC = 0; VEB = 5 V
IEB0
<10
µA
Base emitter voltage *
lC = 500 mA; VCE = 1 V
VBE
<
1,2 V
Saturation voltage
IC = 500 mA; IB = 50 mA
VCEsat <
700 mV
D.C. current gain
IC = 500 mA; VCE = 1 V
hFE
>40
IC = 100 mA; VCE = 1 V; BC817/BC818
hFE
100 to 600
BC817–16
hFE
100 to 250
BC818–16
BC817–25
hFE
160 to 400
BC818–25
BC817–40
hFE
250 to 600
BC818–40
Transition frequency at f = 100 MHz
IC = 10 mA; VCE = 5 V
fT
>
100 MHz
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 10V
Cc
typ.
5 pF
BC817
BC818


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