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BZX55C3V9 Datasheet(PDF) 1 Page - Continental Device India Limited |
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BZX55C3V9 Datasheet(HTML) 1 Page - Continental Device India Limited |
1 / 4 page SILIICON PLANAR ZENER DIODES BZX55C 2.4V to 120V 500mW DO- 35 Glass Axial Package Best suited for Industrial, Military and Space Applications. The glass passivated diode chip in the hermetically sealed glass package with double studs provides excellent stability and reliability. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) SYMBOL PTA PS Tj Tstg Rth(j-a) (1) On infinite heatsink with 4mm lead length. Forward Voltage @ IF=200mA (BZX55C 2.4V - 27V) VF Forward Voltage @ IF=200mA (BZX55C 30V - 120V) VF ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) Device VZT rZT IZT rZK IZK Temp. Coeff IR @ VR @ IZT* @ IZT* @ IZK of Tamb Zener Voltage 25°C 150°C min max max max typ max max (V) (V) ( Ω Ω) (mA) ( Ω Ω) (mA) (%/°C) ( µµA) ( µµA) (V) BZX55C 2V4 2.28 2.56 85 5.0 600 1.0 -0.07 50 100 1.0 BZX55C 2V7 2.50 2.90 85 5.0 600 1.0 -0.07 10 50 1.0 BZX55C 3V0 2.80 3.20 85 5.0 600 1.0 -0.07 4.0 40 1.0 BZX55C 3V3 3.10 3.50 85 5.0 600 1.0 -0.06 2.0 40 1.0 BZX55C 3V6 3.40 3.80 85 5.0 600 1.0 -0.06 2.0 40 1.0 BZX55C 3V9 3.70 4.10 85 5.0 600 1.0 -0.05 2.0 40 1.0 BZX55C 4V3 4.00 4.60 75 5.0 600 1.0 -0.03 1.0 20 1.0 BZX55C 4V7 4.40 5.00 60 5.0 600 1.0 -0.01 0.5 10 1.0 BZX55C 5V1 4.80 5.40 35 5.0 550 1.0 +0.01 0.1 2.0 1.0 BZX55C 5V6 5.20 6.00 25 5.0 450 1.0 +0.03 0.1 2.0 1.0 BZX55C 6V2 5.80 6.60 10 5.0 200 1.0 +0.04 0.1 2.0 2.0 BZX55C 6V8 6.40 7.20 8 5.0 150 1.0 +0.05 0.1 2.0 3.0 BZX55C 7V5 7.00 7.90 7 5.0 50 1.0 +0.05 0.1 2.0 5.0 BZX55C 8V2 7.70 8.70 7 5.0 50 1.0 +0.06 0.1 2.0 6.2 BZX55C 9V1 8.50 9.60 10 5.0 50 1.0 +0.06 0.1 2.0 6.8 BZX55C 10 9.40 10.60 15 5.0 70 1.0 +0.07 0.1 2.0 7.5 BZX55C 11 10.40 11.60 20 5.0 70 1.0 +0.07 0.1 2.0 8.2 BZX55C 12 11.40 12.70 20 5.0 90 1.0 +0.07 0.1 2.0 9.1 BZX55C 13 12.40 14.10 26 5.0 110 1.0 +0.07 0.1 2.0 10 BZX55C2V4_120V Rev_3 050604E *Pulse Condition : 20ms < tp <50ms . Duty Cycle <2% Thermal Resistance Junction to Ambient (1) max mW W °C °C/mW VALUE 500 5.0 175 0.3 - 65 to +175 UNIT DESCRIPTION 1.2 1.5 V V Surge Power Dissipation Pulse Width=10 ms Power Dissipation (1) Junction Temperature Storage Temperature °C IZM Tamb 50°C (mA) 155 135 125 115 105 95 90 85 80 70 64 58 53 47 43 40 36 32 29 Continental Device India Limited Data Sheet Page 1 of 4 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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