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SIHF840LCS Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIHF840LCS Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91068 4 S11-1050-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 2400 2000 1600 1200 0 400 800 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91068_05 QG, Total Gate Charge (nC) 20 16 12 8 0 4 08 40 32 24 16 V DS = 100 V V DS = 250 V For test circuit see figure 13 V DS = 400 V 91068_06 I D = 8.0 A 48 101 100 VSD, Source-to-Drain Voltage (V) 0.6 1.4 1.2 1.0 0.8 25 °C 150 °C V GS = 0 V 91068_07 1.6 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 150 °C Single Pulse 102 103 2 5 0.1 2 5 1 2 5 10 2 5 25 110 25 102 25 103 91068_08 |
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