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IRF840LCS Datasheet(PDF) 1 Page - Vishay Siliconix |
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IRF840LCS Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Document Number: 91068 www.vishay.com S11-1050-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Power MOSFET IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Ultra Low Gate Charge • Reduced Gate Drive Requirement • Enhanced 30 V VGS Rating • Reduced Ciss, Coss, Crss • Extremely High Frequency Operation • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge then conventional Power MOSFETs. Utilizing the new LCDMOS (low charge device Power MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs. These device improvements combined with the proven ruggedness and reliability that characterize Power MOSFETs offer the designer a new power transistor standard for switching applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12). c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. Uses IRF840LC, SiHF840LC data and test conditions. PRODUCT SUMMARY VDS (V) 500 RDS(on) ()VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) G D S ORDERING INFORMATION Package D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free and Halogen-free SiHF840LCS-GE3 SiHF840LCL-GE3 Lead (Pb)-free IRF840LCSPbF IRF840LCLPbF SiHF840LCS-E3 SiHF840LCL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID 8.0 A TC = 100 °C 5.1 Pulsed Drain Currenta, e IDM 28 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb, e EAS 510 mJ Avalanche Currenta IAR 8.0 A Repetiitive Avalanche Energya EAR 13 mJ Maximum Power Dissipation TC = 25 °C PD 125 W TA = 25 °C 3.1 Peak Diode Recovery dV/dtc, e dV/dt 3.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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