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FQD7N20L Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQD7N20L Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2013 Thermal Characteristics FQD7N20L N-Channel QFET® MOSFET 200 V, 5.5 A, 750 mΩ Description ©2004 Fairchild Semiconductor Corporation FQD7N20L Rev. C1 www.fairchildsemi.com 1 This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 5.5 A, 200 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 6.8 nC) • Low Crss (Typ. 8.5 pF) • 100% Avalanche Tested Absolute Maximum Ratings T C = 25°C unless otherwise noted. D-PAK G S D G S D Symbol Parameter FQD7N20LTM Unit RJC Thermal Resistance, Junction to Case, Max. 2.78 oC/W RJA Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50 • RoHS Compliant • Low Level Gate Drive Requirement Allowing Direct Operating from Logic Drivers Symbol Parameter FQD7N20LTM Unit VDSS Drain-Source Voltage 200 V ID Drain Current 5.5 A - Continuous (TC = 25°C) - Continuous (TC = 100°C) 3.48 A IDM Drain Current - Pulsed (Note 1) 22 A VGSS Gate-Source Voltage ± 20 V EAS Single Pulsed Avalanche Energy (Note 2) 73 mJ IAR Avalanche Current (Note 1) 5.5 A EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns PD Power Dissipation (TA = 25°C) * 2.5 W Power Dissipation (TC = 25°C) 45 W - Derate above 25°C 0.36 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering, 1/8” from case for 5 seconds 300 °C |
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