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LP3000SOT89 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. LP3000SOT89
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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LP3000SOT89 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

   
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LP3000SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 1/16/02
Fax: (408) 970-9950
Email: sales@filss.com
• FEATURES
♦ 29 dBm Output Power at 1-dB Compression at 1.8 GHz
♦ 15 dB Power Gain at 1.8 GHz
♦ 1.3 dB Noise Figure
♦ 46 dBm Output IP3 at 1.8 GHz
♦ 55% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS
The LP3000SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25
µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance.
The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP3000 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include PCS/Cellular low-voltage, high-efficiency amplifiers.
• ELECTRICAL SPECIFICATIONS @ T
Ambient = 25°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
LP3000SOT89-1
IDSS
VDS = 2 V; VGS = 0 V
800
860
924
mA
LP3000SOT89-2
925
975
1024
mA
LP3000SOT89-3
1025
1060
1100
mA
Power at 1-dB Compression
P-1dB
VDS = 5 V; IDS = 50% IDSS
28
29
dBm
Power Gain at 1-dB Compression
G-1dB
VDS = 5 V; IDS = 50% IDSS
14
15
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
PIN = 15 dBm
55
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
1.3
dB
Output Third-Order Intercept Point
IP3
VDS = 5V; IDS = 50% IDSS;
PIN = 3 dBm
46
dBm
Maximum Drain-Source Current
IMAX
VDS = 2 V; VGS = 1 V
1700
mA
Transconductance
GM
VDS = 2 V; VGS = 0 V
700
900
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
15
200
µA
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 15 mA
-0.25
-1.2
-2.0
V
Gate-Source Breakdown
Voltage Magnitude
|VBDGS|
IGS = 15 mA
-10
-12
V
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD|
IGD = 15 mA
-10
-13
V
frequency=1.8 GHz


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