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LP3000P100 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors |
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LP3000P100 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors |
1 / 3 page LP3000P100 PACKAGED 2W POWER PHEMT Phone: (408) 988-1845 http:// www.filss.com Revised: 1/20/01 Fax: (408) 970-9950 Email: sales@filss.com • FEATURES ♦ 33 dBm Output Power at 1-dB Compression at 15 GHz ♦ 8 dB Power Gain at 15 GHz ♦ 60% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available in die form or in other packages. The LP3000P100 is designed for medium-power, linear amplification. This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems. • ELECTRICAL SPECIFICATIONS @ T Ambient = 25 ° °C Parameter Symbol Test Conditions Min Typ Max Units Saturated Drain-Source Current IDSS VDS = 2 V; VGS = 0 V 800 975 1100 mA Power at 1-dB Compression P-1dB VDS = 8 V; IDS = 50% IDSS 31.5 33 dBm Power Gain at 1-dB Compression G-1dB VDS = 8 V; IDS = 50% IDSS 7 8 dB Power-Added Efficiency PAE VDS = 8 V; IDS = 50% IDSS; PIN = 17 dBm 45 % Maximum Drain-Source Current IMAX VDS = 2 V; VGS = 1 V 1700 mA Transconductance GM VDS = 2 V; VGS = 0 V 700 900 mS Gate-Source Leakage Current IGSO VGS = -5 V 15 130 µA Pinch-Off Voltage VP VDS = 2 V; IDS = 5 mA -0.25 -1.2 -2.0 V Gate-Source Breakdown Voltage Magnitude |VBDGS| IGS = 8 mA -12 -15 V Gate-Drain Breakdown Voltage Magnitude |VBDGD| IGD = 8 mA -12 -16 V frequency=15 GHz |
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