LP3000P100

Phone:

(408) 988-1845

http://

www.filss.com

Revised:

1/20/01

Fax:

(408) 970-9950

Email:

sales@filss.com

• FEATURES

♦ 33 dBm Output Power at 1-dB Compression at 15 GHz

♦ 8 dB Power Gain at 15 GHz

♦ 60% Power-Added Efficiency

• DESCRIPTION AND APPLICATIONS

The LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide

(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a

0.25

µm x 3000 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed

“mushroom” gate structure minimizes parasitic gate-source and gate resistance.

The epitaxial

structure and processing have been optimized for reliable high-power applications. The LP3000 also

features Si3N4 passivation and is available in die form or in other packages.

The LP3000P100 is designed for medium-power, linear amplification. This device is suitable for

applications in commercial and military environments, and it is appropriate to be used as a medium

power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high

efficiency amplifiers, and WLL systems.

• ELECTRICAL SPECIFICATIONS @ T

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Saturated Drain-Source Current

800

975

1100

mA

Power at 1-dB Compression

P-1dB

31.5

33

dBm

Power Gain at 1-dB Compression

G-1dB

7

8

dB

Power-Added Efficiency

PAE

45

%

Maximum Drain-Source Current

1700

mA

Transconductance

700

900

mS

Gate-Source Leakage Current

15

130

µA

Pinch-Off Voltage

-0.25

-1.2

-2.0

V

Gate-Source Breakdown

Voltage Magnitude

-12

-15

V

Gate-Drain Breakdown

Voltage Magnitude

-12

-16

V

frequency=15 GHz