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LP1500SOT89 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. LP1500SOT89
Description  LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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LP1500SOT89 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

   
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LP1500SOT89
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
Phone: (408) 988-1845
http:// www.filss.com
Revised: 1/16/02
Fax: (408) 970-9950
Email: sales@filss.com
• FEATURES
♦ 27.5 dBm Output Power at 1-dB Compression at 1.8 GHz
♦ 17 dB Power Gain at 1.8 GHz
♦ 1.0 dB Noise Figure
♦ 44 dBm Output IP3 at 1.8 GHz
♦ 50% Power-Added Efficiency
• DESCRIPTION AND APPLICATIONS
The LP1500SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide
(AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a
0.25
µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed
“mushroom” gate structure minimizes parasitic gate-source and gate resistance.
The epitaxial
structure and processing have been optimized for reliable high-power applications. The LP1500 also
features Si3N4 passivation and is available in die form or in other packages.
Typical applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN
systems, and other types of wireless infrastructure systems.
• ELECTRICAL SPECIFICATIONS @ T
Ambient = 25°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
LP1500SOT89-1
IDSS
VDS = 2 V; VGS = 0 V
375
420
450
mA
LP1500SOT89-2
451
490
526
mA
LP1500SOT89-3
527
560
600
mA
Power at 1-dB Compression
P-1dB
VDS = 5 V; IDS = 50% IDSS
26
27.5
dBm
Power Gain at 1-dB Compression
G-1dB
VDS = 5 V; IDS = 50% IDSS
15
17
dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS;
PIN = 15 dBm
50
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS
1.0
dB
Output Third-Order Intercept Point
IP3
VDS = 5V; IDS = 50% IDSS;
PIN = -1 dBm
44
dBm
Maximum Drain-Source Current
IMAX
VDS = 2 V; VGS = 1 V
925
mA
Transconductance
GM
VDS = 2 V; VGS = 0 V
300
400
mS
Gate-Source Leakage Current
IGSO
VGS = -5 V
10
100
µA
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 8 mA
-0.25
-1.2
-2.0
V
Gate-Source Breakdown
Voltage Magnitude
|VBDGS|
IGS = 8 mA
-10
-12
V
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD|
IGD = 8 mA
-10
-13
V
frequency=1.8 GHz


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