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LP1500SOT223 Datasheet(PDF) 1 Page - Filtronic Compound Semiconductors

Part No. LP1500SOT223
Description  Low Noise, High Linearity Packaged PHEMT
Download  2 Pages
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Maker  FILTRONIC [Filtronic Compound Semiconductors]
Homepage  http://www.filtronic.co.uk/
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LP1500SOT223 Datasheet(HTML) 1 Page - Filtronic Compound Semiconductors

   
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Filtronic
LP1500SOT223
Solid State
Low Noise, High Linearity Packaged PHEMT
Phone: (408) 988-1845
Internet: http://www.filtronicsolidstate.com
Fax: (408) 970-9950
FEATURES
+27 dBm Typical Power at 1800 MHz
15 dB Typical Power Gain at 1800 MHz
1.0 dB Typical Noise Figure
+42 dBm Typical Intercept Point
Color-coded by I
DSS range
(TOP VIEW)
DESCRIPTION AND APPLICATIONS
The LP1500SOT223 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.25
µm by 1500 µm
Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for reliable high-power applications.
The LP1500 also
features Si3N4 passivation and is available in a die form or in a flanged ceramic package (P100) for high-power
applications, or in the SOT-89 plastic package.
Typical applications include PCS/Cellular low-voltage high-efficiency output amplifiers, and general purpose power
amplifiers. The LP 1500 may be procured in a variety of grades, depending upon specific user requirements. Standard lot
screening is patterned after MIL-STD-19500, JANC grade.
PERFORMANCE SPECIFICATIONS (TA = 25°C)
SYMBOLS
PARAMETERS
MIN
TYP
MAX
UNITS
IDSS
Saturated Drain-Source Current
VDS = 2V VGS = 0V
LP1500-SOT223-1 BLUE
LP1500-SOT223-2 GREEN
LP1500-SOT223-3 RED
375
451
527
420
490
560
450
526
600
mA
P1dB
Output Power at 1dB Gain Compression
VDS = 3.3V, IDS = 33% IDSS
f = 1800 Mhz
25.0
27.0
dBm
G1dB
Power Gain at 1dB Gain Compression
VDS = 3.3V, IDS = 33% IDSS
f = 1800 MHz
13.5
15.0
dB
NF
Noise Figure
VDS = 3.3V, IDS = 33% IDSS, f = 1.8 GHz
1.0
dB
IP3
Output Intercept Point VDS = 3.3V, IDS = 33% IDSS, f = 1.8 GHz
42
dBm
IMAX
Maximum Drain-Source Current
VDS = 2V VGS = +1V
925
mA
GM
Transconductance
VDS = 2V VGS = 0V
300
400
mS
VP
Pinch-Off Voltage
VDS = 2V IDS = 5mA
-0.25
-1.2
-2.0
V
IGSO
Gate-Source Leakage Current
VGS = -3V
10
75
µA
BVGS
Gate-Source Breakdown Voltage
IGS = 8mA
-8
-10
V
BVGD
Gate-Drain Breakdown Voltage
IGD = 8mA
-8
-11
V
DSS-026 WF
SOURCE
GATE
DRAIN
SOURCE


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