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Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

P1035-QH

February 2010 - Rev 17-Feb-10

5.9-9.5 GHz Linear Power Amplifier

QFN, 4x4mm

26 dB Small Signal Gain

39 dBm Third Order Intercept Point (OIP3)

Integrated Power Detector

4x4mm QFN Package, RoHS Compliant

100% RF Testing

Features

Supply Voltage (Vd1,2,3)

Supply Current (Id1,2,3)

Gate Bias Voltage (Vg1,2,3)

RF Input Power

Operating Temperature (Ta)

Storage Temperature (Tstg)

MSL Level (MSL)

+7.2V

600 mA

-3V

4.2W

+15 dBm

-55 to +85 ºC

-65 to +165 ºC

150 ºC

MSL3

(1) Operation of this device above any one of these parameters

may cause permanent damage.

(2) Channel temperature directly affects a device’s MTTF.

Channel temperature should be kept as low as possible to

maximize lifetime.

Parameter

Frequency Range (f)

Small Signal Gain (S21)

Input Return Loss (S11)

Output Return Loss (S22)

Reverse Isolation (S12)

Psat

P1dB

OIP3

Drain Bias Voltage (Vd1,2,3)

Detector Bias Voltage (Vdet,ref)

Gate Bias Voltage (Vg1,2,3)

Supply Current (Id1)

Supply Current (Id2)

Supply Current (Id3)

Units

GHz

dB

dB

dB

dB

dBm

dBm

dBm

VDC

VDC

VDC

mA

mA

mA

Min.

5.9

-2

Typ.

-

26

13

10

45

29

27.5

39

6

5

-1

70

140

280

Max.

9.5

The XP1035-QH is a packaged linear power amplifier

that operates over the 5.9-9.5 GHz frequency band.The

device provides 26 dB gain and 39 dBm Output Third

Order Intercept Point (OIP3) across the band and is

offered in an industry standard, fully molded 4x4mm

QFN package.The packaged amplifier is comprised of

a three stage power amplifier with an integrated,

temperature compensated on-chip power detector.

The device includes on-chip ESD protection structures

and DC by-pass capacitors to ease the implementation

and volume assembly of the packaged part.The device

is manufactured in GaAs PHEMT device technology

with BCB wafer coating to enhance ruggedness and

repeatability of performance.The XP1035-QH is well

suited for Point-to-Point Radio, LMDS, SATCOM and

VSAT applications.

General Description