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XP1035-QH Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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XP1035-QH Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 7 page Page 1 of 7 Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws. P1035-QH February 2010 - Rev 17-Feb-10 5.9-9.5 GHz Linear Power Amplifier QFN, 4x4mm 26 dB Small Signal Gain 39 dBm Third Order Intercept Point (OIP3) Integrated Power Detector 4x4mm QFN Package, RoHS Compliant 100% RF Testing Features Absolute Maximum Ratings1 Supply Voltage (Vd1,2,3) Supply Current (Id1,2,3) Gate Bias Voltage (Vg1,2,3) Max Power Dissipation (Pdiss) RF Input Power Operating Temperature (Ta) Storage Temperature (Tstg) Channel Temperature (Tch)2 MSL Level (MSL) +7.2V 600 mA -3V 4.2W +15 dBm -55 to +85 ºC -65 to +165 ºC 150 ºC MSL3 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device’s MTTF. Channel temperature should be kept as low as possible to maximize lifetime. Electrical Characteristics (AmbientTemperature T = 25 oC) Parameter Frequency Range (f) Small Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Reverse Isolation (S12) Psat P1dB OIP3 Drain Bias Voltage (Vd1,2,3) Detector Bias Voltage (Vdet,ref) Gate Bias Voltage (Vg1,2,3) Supply Current (Id1) Supply Current (Id2) Supply Current (Id3) Units GHz dB dB dB dB dBm dBm dBm VDC VDC VDC mA mA mA Min. 5.9 -2 Typ. - 26 13 10 45 29 27.5 39 6 5 -1 70 140 280 Max. 9.5 The XP1035-QH is a packaged linear power amplifier that operates over the 5.9-9.5 GHz frequency band.The device provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is offered in an industry standard, fully molded 4x4mm QFN package.The packaged amplifier is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part.The device is manufactured in GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance.The XP1035-QH is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications. General Description |
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