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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

Low Noise Amplifier

20.0-40.0 GHz

XL1000-BD

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Rev. V1

Features

 Self Bias Architecture

 Small Size

 3.0 or 5.0 V Operation

 20.0 dB Small Signal Gain

 2.0 dB Noise Figure

 +9.0 dBm P1dB Compression Point

 100% On-Wafer RF, DC and Noise Figure

Testing

 100% Visual Inspection to MIL-STD-883 Method

2010

 RoHS* Compliant and 260°C Reflow Compatible

Description

M/A-COM Tech’s three stage 20.0-40.0 GHz GaAs

MMIC low noise amplifier has a small signal gain of

20.0 dB with a noise figure of 2.0 dB across the

band. This MMIC uses M/A-COM Tech’s GaAs

PHEMT device model technology, and is based

upon electron beam lithography to ensure high

repeatability and uniformity. The chip has surface

passivation to protect and provide a rugged part with

backside via holes and gold metallization to allow

either a conductive epoxy or eutectic solder die

attach process. This device is well suited for

Millimeter-wave

Point-to-Point

Radio,

LMDS,

SATCOM and VSAT applications.

Ordering Information

Part Number

Package

XL1000-BD-000V

“V” - vacuum release

gel paks

XL1000-BD-EV1

evaluation module

Absolute Maximum Ratings

Parameter

Absolute Max.

Supply Voltage (Vd)

+7.0 VDC

Supply Current (Id)

70 mA

Input Power (Pin)

+12 dBm

Storage Temperature (Tstg)

-65 °C to +165 °C

Operating Temperature (Ta)

-55 °C to +85 °C

+175 °C

1. Channel temperature directly affects a device's MTTF. Chan-

nel temperature should be kept as low as possible to maximize

lifetime.

Chip Device Layout