UF2840P datasheet(1/3 Pages) MA-COM

Part #	UF2840P

Description	RF Power MOSFET Transistor

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Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

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RF Power MOSFET Transistor

40W, 100-500 MHz, 28V

M/A-COM Products

Released; RoHS Compliant

UF2840P

• North America Tel: 800.366.2266 / Fax: 978.366.2266

• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

• N-channel enhancement mode device

• DMOS structure

• Lower capacitances for broadband operation

• Common source configuration

• Lower noise floor

ABSOLUTE MAXIMUM RATINGS AT 25° C

Parameter

Rating

Drain-Source Voltage

65

Gate-Source Voltage

20

Drain-Source Current

4*

Power Dissipation

116

Junction Temperature

200

Storage Temperature

-55 to 150

Thermal Resistance

1.5

Symbol

VDS

VGS

IDS

PD

TJ

TSTG

θJC

Units

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS AT 25°C

Parameter

Symbol

Min

Max

Units

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

65

-

V

VGS = 0.0 V , IDS = 5.0 mA

Drain-Source Leakage Current

IDSS

-

1.0

mA

VGS = 28.0 V , VGS = 0.0 V

Gate-Source Leakage Current

IGSS

-

1.0

µA

VGS = 20.0 V , VDS = 0.0 V

Gate Threshold Voltage

VGS(TH)

2.0

6.0

V

VDS = 10.0 V , IDS = 100.0 mA

Forward Transconductance

GM

.5

-

S

VDS = 10.0 V , IDS 1.0 A , Δ VGS = 1.0V, 80 μs Pulse

Input Capacitance

CISS

-

45

pF

VDS = 28.0 V , F = 1.0 MHz

Output Capacitance

COSS

-

30

pF

VDS = 28.0 V , F = 1.0 MHz

Reverse Capacitance

CRSS

-

8

pF

VDS = 28.0 V , F = 1.0 MHz

Power Gain

GP

10

-

dB

VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz

Drain Efficiency

ŋD

50

-

%

VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz

Load Mismatch Tolerance

VSWR-T

-

20:1

-

VDD = 28.0 V, IDQ = 500.0 mA, POUT = 40.0 W F =500 MHz

F (MHz)

ZIN (Ω)

ZLOAD (Ω)

100

6.0-j20.0

25.0j27.0

300

2.5-j5.5

13.0+j13.0

500

4.0+j3.0

12.0j5.0

VDD=28V, IDQ=500 mA, POUT =40.0 W

TYPICAL DEVICE IMPEDANCES

ZIN is the series equivalent input impedance of the device

from gate to source.

ZLOAD is the optimum series equivalent load impedance

as measured from drain to ground.

Package Outline

*Per side

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