EM564081BC-70E datasheet(10/12 Pages) ETRON

Part #	EM564081BC-70E

Description	512K x 8 Low Power SRAM

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Manufacturer	ETRON [Etron Technology, Inc.]

Direct Link	http://www.etron.com

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10 / 12 page

EtronTech

EM564081

Preliminary

10

Rev 0.7

January 2001

Data Retention Characteristics (Ta = -40

°C to 85°C)

Symbol

Parameter

Min

Typ

Max

Unit

VDR

Data Retention Supply

Voltage

CE1#

≥ VDD - 0.2V, CE2 ≤ 0.2V,

VIN

≥ VDD - 0.2V or VIN ≤ 0.2V

1.0

−

3.6

V

IDR

Data Retention Current

VDD = 1.0V, CE1#

≥ VDD - 0.2V,

CE2

≤ 0.2V, VIN ≥ VDD - 0.2V or

VIN

≤ 0.2V

−

0.5

3.5

µA

tSDR Chip Deselect to Data Retention Mode Time

0

−

ns

tRDR Recovery Time

tRC

−

ns

CE1# Controlled Data Retention Mode (see Note1)

CE1

VIH

2.7V

VDD

DATA RETENTION MODE

VDD - 0.2V

tRDR

tSDR

GND

VDD

CE2 Controlled Data Retention Mode (see Note2)

GN D

0. 2 V

DATA RE TENTI ON MOD E

tSDR

t RDR

CE 2

VDD

V

DD

2. 7 V

VIH

V

IL

Note:

1. If CE1# controlled data retention mode, minimum standby current mode is entered when CE2

≤ 0.2V or

CE2

≥ VDD - 0.2V.

2. In CE2 controlled data retention mode, minimum standby current mode is entered when CE2

≤ 0.2V.

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