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NPTB00050 Datasheet(PDF) 3 Page - M/A-COM Technology Solutions, Inc.

Part # NPTB00050
Description  Gallium Nitride 28V, 50W RF Power Transistor
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

NPTB00050 Datasheet(HTML) 3 Page - M/A-COM Technology Solutions, Inc.

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NDS-007 Rev 6, April 2013
NPTB00050
Page 3
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
ZS is the source impedance
presented to the device.
ZL is the load impedance
presented to the device.
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency
(MHz)
ZS (W)
ZL (W)
PSAT (W)
Gain (dB)
Drain Efficiency @
PSAT (%)
2000
3.2 - j3.5
4.8 - j2.5
50
15.0
65
2400
3.1 - j7.5
5.0 - j3.5
50
13.8
62
2500
3.1 - j8.4
5.2 - j3.6
50
13.8
62
2600
3.2 - j9.4
5.3 - j3.7
50
13.5
61
2700
3.7 - j11.0
5.2 - j4.9
50
13.1
60
3000
4.4 - j13.0
5.2 - j5.3
50
13.0
60
Figure 1 - Optimal Impedances for CW Performance, VDS = 28V, IDQ = 450mA
Load-Pull Data, Reference Plane at Device Leads
VDS=28V, IDQ=450mA, TA=25°C unless otherwise noted


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