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NPTB00050 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Part # NPTB00050
Description  Gallium Nitride 28V, 50W RF Power Transistor
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

NPTB00050 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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NDS-007 Rev 6, April 2013
NPTB00050
Page 1
NPTB00050
Not recommended for new designs
Contact applications@nitronex.com for questions or support
FEATURES
• Optimized for broadband operation from
DC - 4000MHz
• 50W P3dB CW narrowband power
• 25W P3dB CW broadband power from
500-1000MHz
• Characterized for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to ECCN 3A982.a.1 export control
Gallium Nitride 28V, 50W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
Broadband
50 Watt, 28 Volt
GaN HEMT
RF Specifications (CW): VDS = 28V, IDQ = 450mA, Frequency = 3000MHz, TC = 25°C, Measured in Nitronex Test Fixture
Symbol
Parameter
Min
Typ
Max
Units
P3dB
Average Output Power at 3dB Gain Compression
45
50
-
W
P1dB
Average Output Power at 1dB Gain Compression
33
38
-
W
GSS
Small Signal Gain
10.5
11.5
-
dB
h
Peak Drain Efficiency at POUT = P3dB
55
60
-
%
y
Output mismatch stress, VSWR = 7:1, all phase
angles, POUT = P1dB
No Performance Degradation After Test
Typical OFDM Performance: VDS = 28V, IDQ = 300mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst,
continuous frame data, 10MHz channel bandwidth. Peak/Avg = 10.3dB @ 0.01% probability on CCDF.
Frequency = 2400 to 2600MHz. POUT,AVG = 6W, TC=25°C.
Symbol
Parameter
Typ
Units
GP
Power Gain
12.0
dB
h
Drain Efficiency
23
%
EVM
Error Vector Magnitude
2.0
%


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