PTF10122 datasheet(1/6 Pages) ERICSSON

Part #	PTF10122

Description	50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor

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Manufacturer	ERICSSON [Ericsson]

Direct Link	http://www.ericsson.com

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RF Specifications (100% Tested)

Characteristic

Symbol

Min

Typ

Max

Units

Gain

(VDD = 28 V, POUT = 15 W, IDQ = 600 mA, f = 2.11 GHz)

Gps

10.0

11.0

—

dB

Power Output at 1 dB Compression

(VDD = 28 V, IDQ = 600 mA, f = 2.17 GHz)

P-1dB

50

—

Watts

Drain Efficiency

(VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz)

hD

30

35

—

%

Load Mismatch Tolerance

(VDD = 28 V, POUT = 50 W, IDQ = 600 mA, f = 2.17 GHz

Y

—

10:1

—

—all phase angles at frequency of test)

All published data at TCASE = 25°C unless otherwise indicated.

PTF 10122

50 Watts WCDMA, 2.1–2.2 GHz

GOLDMOS™ Field Effect Transistor

Package 20248

0

10

20

30

40

50

60

01

234

56

Input Power (Watts)

0

10

20

30

40

50

VDD = 28 V

IDQ = 600 mA

f = 2.17 GHz

Typical Output Power vs. Input Power

Description

The PTF 10122 is an internally matched common source N-channel

enhancement-mode lateral MOSFET intended for WCDMA applications

from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of

gain. Nitride surface passivation and full gold metallization ensure ex-

cellent device lifetime and reliability.

•

INTERNALLY MATCHED

•

Guaranteed Performance at 2.17 GHz, 28 V

- Output Power = 50 Watts Min

- Gain = 11.0 dB Typ

- Efficiency = 35% Typ

•

Full Gold Metallization

•

Silicon Nitride Passivated

•

Back Side Common Source

•

Excellent Thermal Stability

•

100% Lot Traceability

10122

A-1234569946

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PTF10122 Datasheet(PDF) 1 Page - Ericsson

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