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MA8334-001 Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MA8334-001 Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
2 / 3 page MA8334 Series High Power Multi-Throw PIN Diode Switch Modules V5 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. 2 Note: Specifications subject to change without notification Performance Data Model Number Case Style Maximum 3 CW Input Power (Watts) Switch Type Frequency Range (MHz) Minimum Isolation 1,2 (dB) Maximum Insertion Loss 1,2 (dB) Diode Voltage Rating (Volts) MA8334-001 844-001 100 SPDT 10-1000 24 0.35 900 MA8334-004 844-004 100 SP3T 10-1000 24 0.35 900 Nominal Carrier Lifetime 4 TL (µS) 8 8 Specifications @ TA=+25°C 1) For the MA8334-001 and the MA8334-004 switches, the small signal insertion loss and isolation measurements are performed at 450 MHz with the “ON” port forward biased @ +50mA, +1V and the “OFF” port reverse biased at 0V, 0mA. For (100W) high signal conditions, the “ON “ port is forward biased @ +50mA, +1V and the “OFF” port is re- verse biased at –100V, 0mA. 2) Maximum small signal VSWR for all switches is 1.35:1 with source and load VSWR < 1.05 :1 in 50 Ω system at 450 MHz 3) Nominal thermal resistance for each diode is 20°C/W. 4) Bias conditions +10mA/-6mA Performance Notes: |
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