FQD6P25TM datasheet(3/9 Pages) FAIRCHILD

Part #	FQD6P25TM

Description	250V P-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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3 / 9 page

Rev. A1, October 2008

0.0

0.5

1.0

1.5

2.0

2.5

3.0

10

-1

10

0

10

1

25

150

Notes:

1. V

GS = 0V

2. 250sPulseTest

-V

SD , Source-Drain Voltage [V]

24

68

10

-1

10

0

10

1

Notes:

1. V

DS = -40V

2. 250s Pulse Test

-55

150

25

-V

GS , Gate-Source Voltage [V]

10

-1

10

0

10

1

10

-1

10

0

10

1

V

GS

Top :

-15V

-10V

-8.0V

-7.0V

-6.5V

-6.0V

Bottom : -5.5V

Notes :

1. 250s PulseTest

2. T

C = 25

-V

DS , Drain-Source Voltage [V]

048

12

16

20

24

0

2

4

6

8

10

12

V

DS = -125V

V

DS = -50V

V

DS = -200V

Note : I

D = -6.0 A

Q

G, Total Gate Charge [nC]

10

-1

10

0

10

1

0

200

400

600

800

1000

1200

1400

C

iss = Cgs + Cgd (Cds = shorted)

C

oss = Cds + Cgd

C

rss = Cgd

Notes :

1. V

GS = 0 V

2. f =1MHz

C

rss

C

oss

C

iss

-V

DS, Drain-Source Voltage [V]

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Note : T

J = 25

V

GS = - 20V

V

GS = - 10V

-I

D , Drain Current [A]

Typical Characteristics

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer Characteristics

Figure 1. On-Region Characteristics

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