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FOD8321 Datasheet(PDF) 6 Page - Fairchild Semiconductor |
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FOD8321 Datasheet(HTML) 6 Page - Fairchild Semiconductor |
6 / 19 page ©2010 Fairchild Semiconductor Corporation www.fairchildsemi.com FOD8321 Rev. 1.0.4 6 Switching Characteristics Apply over all recommended conditions, typical value is measured at VDD = 30V, VSS = Ground, TA = 25°C unless otherwise specified. Notes: 9. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. 10. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. 11. PWD is defined as | tPHL – tPLH | for any given device. 12. The difference between tPHL and tPLH between any two FOD8321 parts under same operating conditions, with equal loads. 13. Common mode transient immunity at output high is the maximum tolerable negative dVcm/dt on the trailing edge of the common mode impulse signal, Vcm, to assure that the output will remain high (i.e. VO > 15.0V). 14. Common mode transient immunity at output low is the maximum tolerable positive dVcm/dt on the leading edge of the common pulse signal, Vcm, to assure that the output will remain low (i.e. VO < 1.0V). Symbol Parameter Conditions Min. Typ. Max. Units Figure tPHL Propagation Delay Time to Logic Low Output(9) IF = 10mA to 16mA, Rg = 10Ω, Cg =10nF, f = 10kHz, Duty Cycle = 50% 100 285 500 ns 10, 11, 12, 13, 14, 27 tPLH Propagation Delay Time to Logic High Output(10) 100 260 500 ns 10, 11, 12, 13, 14, 27 PWD Pulse Width Distortion(11) |tPHL – tPLH| 25 300 ns PDD (Skew) Propagation Delay Difference Between Any Two Parts(12) -350 350 tR Output Rise Time (10% to 90%) 60 ns 27 tF Output Fall Time (90% to 10%) 60 ns 27 tULVO ON ULVO Turn On Delay IF = 10mA, VO > 5V 0.8 µs tULVO OFF ULVO Turn Off Delay IF = 10mA, VO < 5V 0.4 µs |CMH| Common Mode Transient Immunity at Output High TA = 25°C, VDD = 30V, IF = 10 to 16mA, VCM = 2000V (13) 20 50 kV/µs 28 |CML| Common Mode Transient Immunity at Output Low TA = 25°C, VDD = 30V, VF = 0V, VCM = 2000V (14) 20 50 kV/µs 28 |
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