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2N3903 Datasheet(PDF) 1 Page - Continental Device India Limited |
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2N3903 Datasheet(HTML) 1 Page - Continental Device India Limited |
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1 / 5 page  NPN SILICON PLANAR EPITAXIAL SWITCHING TRANSISTORS 2N3903 / 2N3904 TO-92 Plastic Package General Purpose Switching And Amplifier Applications ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage VCEO Collector Base Voltage VCBO Emitter Base Voltage VEBO Collector Current Continuous IC Power Dissipation at Ta=25ºC PD Derate Above 25ºC Power Dissipation at Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Temperature Range Tj, Tstg THERMAL RESISTANCE Junction to Case Rth (j-c) Junction to Ambient in free air Rth (j-a) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N3903 Collector Emitter Voltage VCEO IC=1mA, IB=0 >40 Collector Base Voltage VCBO IC=10µA. IE=0 >60 Emitter Base Voltage VEBO IE=10µA, IC=0 >6.0 >6.0 Base Cut Off Current IBL VCE=30V, VEB=3V < 50 < 50 Collector Cut Off Current ICEX VCE=30V, VEB=3V < 50 < 50 DC Current Gain *hFE IC=0.1mA, VCE=1V >20 >40 IC=1mA, VCE=1V >35 >70 IC=10mA, VCE=1V 50-150 100-300 IC=50mA, VCE=1V >30 >60 IC=100mA, VCE=1V >15 >30 Collector Emitter Saturation Voltage *VCE (sat) IC=10mA, IB=1mA < 0.2 < 0.2 IC=50mA, IB=5mA < 0.3 < 0.3 Base Emitter Saturation Voltage *VBE (sat) IC=10mA, IB=1mA 0.65 - 0.85 IC=50mA, IB=5mA < 0.95 < 0.95 *Pulse Condition: =300 µµs, Duty Cycle=2% 2N3903_3904Rev_1 240206E W V mA mW mW/ºC UNITS V V V nA V nA V mW/ºC ºC ºC/W ºC/W For Lead Free Parts, Device Part # will be Prefixed with "T" VALUE 40 60 UNITS V V 200 625 1.5 5.0 2N3904 83.3 200 12 -55 to +150 6.0 V V 0.65 - 0.85 >40 >60 E B C Continental Device India Limited Data Sheet Page 1 of 5 Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company |
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