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2SJ353 Datasheet(PDF) 4 Page - NEC

Part # 2SJ353
Description  P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SJ353 Datasheet(HTML) 4 Page - NEC

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2SJ353
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
–0.01
1
0.8
0.6
0.4
0.2
0
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
0
1
0.8
0.6
0.4
0.2
VGS - Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
–1
1 000
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
–0.1
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
–10
–1
–0.1
–0.01
–0.001
VSD - Source to Drain Voltage - V
–0.1
–1
–10
–2
–5
–100
–10
–0.2
–0.5
–1
–2
–5
1.2
VGS = –10 V
TA = 75 ˚C
25 ˚C
–25 ˚C
–4
–8
–12
–16
–20
ID = –0.8 A
–1.0 A
500
200
100
50
20
10
–10
–20
–50
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
50
20
10
5
2
1
VDD = –30 V
VGS(on) = –10 V
RG = 10
Ω
tf
td(off)
tf
td(on)
0.2
0.4
0.6
0.8
1


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