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PI3B16233 Datasheet(PDF) 2 Page - Pericom Semiconductor Corporation |
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PI3B16233 Datasheet(HTML) 2 Page - Pericom Semiconductor Corporation |
2 / 5 page PI3B16233 3.3V, 16-Bit to 32-Bit FET Mux/DeMux NanoSwitch 2 PS8171F 05/09/06 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 Notes: 1. This parameter is determined by device characterization but is not production tested. Capacitance (TA = 25°C, f = 1 MHz) Maximum Ratings (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ...................................................... –65°Cto+150°C Ambient Temperature with Power Applied ...................... –40°C to +85°C Supply Voltage Range ....................................................... –0.5Vto+4.6V DC Input Voltage ............................................................... –0.5Vto+4.6V DC Output Current ........................................................................ 120mA Power Dissipation ............................................................................. 0.5W Note: Stresses greater than those listed under MAXIMUM RAT- INGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC Electrical Characteristics (Over the Operating Range, TA = –40°C to +85°C, VCC = 3.0V to 3.6V) s r e t e m a r a Pn o i t p i r c s e Ds n o i t i d n o C t s e T ) 1 ( . n i M. p y T ) 2 ( . x a Ms t i n U V H I e g a tl o V H G I H t u p n Il e v e L h g i H c i g o L d e e t n a r a u G0 . 2 V V L I e g a tl o V W O L t u p n Il e v e L w o L c i g o L d e e t n a r a u G5 . 0 –8 . 0 I H I t n e r r u C H G I H t u p n IV C C V ,. x a M = N I V = C C 1 ± A μ I L I t n e r r u C W O L t u p n IV C C V ,. x a M = N I =D N G1 ± I H Z O t n e r r u C t u p t u O e c n a d e p m I h g i H0 ≤ B , A ≤ V C C 1 ± V K I e g a tl o V e d o i D p m a l CV C C I ,. n i M = N I A m 8 1 – =7 . 0 –2 . 1 –V R N O e c n a t s i s e R N O h c ti w S ) 3 ( V C C V ,. n i M = N I I , V 0 . 0 = N O A m 4 6 r o A m 8 4 = V C C V ,. n i M = N I I , V 4 . 2 = N O A m 5 1 = 5 0 1 8 5 1 Ω s r e t e m a r a P ) 1 ( n o i t p i r c s e Ds n o i t i d n o C t s e T. p y Ts t i n U C N I e c n a ti c a p a C t u p n I V N I V 0 = 0 . 3 F p C N O n O h c ti w S , e c n a ti c a p a C B / A 0 . 5 2 Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 3.3V, TA = 25°C ambient and maximum loading. 3. Measured by the voltage drop between A and B pin at indicated current through the switch. ON resistance is determined by the lower of the voltages on the two (A,B) pins. 07-0010 |
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