HIGH SPEED SILICON SWITCHING DIODE

CD4531

DO- 35

Glass Axial Package

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

VALUE

UNIT

Repetitive Peak Reverse Voltage

75

V

Continuous Reverse Voltage

75

V

Average Rectified Forward Current

150

mA

Forward Current (DC)

200

mA

Repetitive Peak Forward Current

450

mA

Non Repetitive Peak Forward Current t<1

µs

2000

mA

t<1 s

500

mA

Power Dissipation up to Tamb=25 ºC

500

mW

Operating & Storage Junction Temperature

- 65 to +200

ºC

Range

Thermal Resistance

Junction to Ambient Lead Length 5mm

350

K/W

Junction to Tie-Point Lead Length 5mm

120

K/W

*Device mounted on a printed circuit-board without metallization pad.

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Forward Voltage

1.0

V

Reverse Current

25

nA

50

µA

5.0

µA

Reverse Breakdown Voltage

75

V

DYNAMIC CHARACTERISTICS

Diode Capacitance

4.0

pF

Forward Recovery Voltage

3.0

V

Reverse Recovery Time

4.0

ns

.

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Continental Device India Limited

Data Sheet

Page 1 of 3

CD4531Rev221101