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FQU2N100TU Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FQU2N100TU Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page 2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FQD2N100 FQD2N100TM DPAK FQU2N100 FQU2N100TU IPAK - 330 mm 16 mm - 2500 70 (Note 4) (Note 4) Electrical Characteristics T C = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 120mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 2.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Unit Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 1000 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.976 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 1000 V, VGS = 0 V -- -- 10 µA VDS = 800 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.8 A -- 7.1 9 Ω gFS Forward Transconductance VDS = 50 V, ID = 0.8 A -- 1.9 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 400 520 pF Coss Output Capacitance -- 40 52 pF Crss Reverse Transfer Capacitance -- 5 6.5 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 500 V, ID = 2.0 A, RG = 25 Ω -- 13 35 ns tr Turn-On Rise Time -- 30 70 ns td(off) Turn-Off Delay Time -- 25 60 ns tf Turn-Off Fall Time -- 35 80 ns Qg Total Gate Charge VDS = 800 V, ID = 2.0 A, VGS = 10 V -- 12 15.5 nC Qgs Gate-Source Charge -- 2.5 -- nC Qgd Gate-Drain Charge -- 6.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.0 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.6 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 2.0 A, dIF / dt = 100 A/µs -- 520 -- ns Qrr Reverse Recovery Charge -- 2.3 -- µC www.fairchildsemi.com ©2004 Fairchild Semiconductor Corporation FQD2N100 / FQU2N100 Rev. C0 |
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