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DG419BDJ Datasheet(PDF) 4 Page - Vishay Siliconix |
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DG419BDJ Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 16 page www.vishay.com 4 Document Number: 72107 S09-1261-Rev. D, 13-Jul-09 Vishay Siliconix DG417B, DG418B, DG419B Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25 °C, full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 15 V, V- = - 15 V VL = 5 V, VIN = 2.4 V, 0.8 V f Temp.b Typ.c A Suffix - 55 °C to 125 °C D Suffix - 40 °C to 85 °C Unit Min.d Max.d Min.d Maxd. Dynamic Characteristics Source Off Capacitancee CS(off) f = 1 MHz, VS = 0 V Room 12 pF Drain Off Capacitancee CD(off) DG417B DG418B Room 12 Channel On Capacitancee CD(on) f = 1 MHz, VS = 0 V DG417B DG418B Room 50 DG419B Room 57 Power Supplies Positive Supply Current I+ V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V Room Full 0.001 1 5 1 5 µA Negative Supply Current I- Room Full - 0.001 - 1 - 5 - 1 - 5 Logic Supply Current IL Room Full 0.001 1 5 1 5 Ground Current IGND Room Full - 0.001 - 1 - 5 - 1 - 5 SPECIFICATIONSa Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 V f Temp.b Typ.c A Suffix - 55 °C to 125 °C D Suffix - 40 °C to 85 °C Unit Min.d Max.d Min.d Max.d Analog Switch Analog Signal Rangee VANALOG Full 0 12 0 12 V Drain-Source On-Resistance RDS(on) IS = - 10 mA, VD = 3.8 V V+ = 10.8 V Room Full 26 35 52 35 45 Ω Dynamic Characteristics Turn-On Time tON RL = 300 Ω, CL = 35 pF VS = 8 V, See Switching Time Test Circuit Room Full 100 125 155 125 143 ns Turn-Off Time tOFF Room Full 38 66 73 66 69 Break-Before-Make Time Delay tD RL = 300 Ω, CL = 35 pF DG419B Room 62 25 25 Transition Time tTRANS RL = 300 Ω, CL = 35 pF VS1 = 0 V, 8 V, VS2 = 8 V, 0 V Room Full 95 119 153 119 141 Charge Injection Q CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω Room 18 pC Power Supplies Positive Supply Current I+ V+ = 13.2 V, VL = 5.25 V VIN = 0 or 5 V Room Full 0.001 1 5 1 5 µA Negative Supply Current I- Room - 0.001 - 1 - 5 - 1 - 5 Logic Supply Current IL Room 0.001 1 5 1 5 Ground Current IGND Room - 0.001 - 1 - 5 -1 - 5 SPECIFICATIONSa |
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