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STP75N75F4 Datasheet(PDF) 5 Page - STMicroelectronics

Part No. STP75N75F4
Description  N-channel 75 V, 0.0092 typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package
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Maker  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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STP75N75F4 Datasheet(HTML) 5 Page - STMicroelectronics

 
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STP75N75F4
Electrical characteristics
Doc ID 023484 Rev 1
5/12
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
ISD
Source-drain current
-
78
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
312
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 78 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 78 A, VDD = 60 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
-
67
183
5.5
ns
nC
A


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