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MAGX-000035-01000X Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

Part No. MAGX-000035-01000X
Description  GaN on SiC HEMT Power Transistor
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Maker  MA-COM [M/A-COM Technology Solutions, Inc.]
Homepage  http://www.macomtech.com
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MAGX-000035-01000X Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

   
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GaN on SiC HEMT Power Transistor
10W CW, 30 MHz - 3.5 GHz
Rev. V3
MAGX-000035-010000
MAGX-000035-01000S
2
2
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
2
Parameter
Limit
Supply Voltage (VDD)
+65 V
Supply Voltage (VGG)
-8 to 0 V
Supply Current (IDD)
800 mA
Input Power (PIN)
25 dBm
Junction/Channel Temp
200ºC
Continuous Power Dissipation (PDISS) at 85 ºC
18 W
Pulsed Power Dissipation (PAVG) at 85 ºC
43 W
Thermal Resistance, (TJ = 200 ºC), CW
9.2 ºC/W
Thermal Resistance, (TJ = 200 ºC), Pulsed 500 μs, 10% Duty cycle
3.4 ºC/W
Operating Temp
-40 to +95ºC
Storage Temp
-65 to +150ºC
ESD Min. - Charged Device Model (CDM)
250 V
ESD Min. - Human Body Model (HBM)
250 V
MTTF (TJ < 200 °C)
600 years
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Input Capacitance
VDS = 0 V, VGS = -8 V, F = 1 MHz
CISS
-
4.4
-
pF
Output Capacitance
VDS = 50 V, VGS = -8 V, F = 1 MHz
COSS
-
1.9
-
pF
Reverse Transfer Capacitance
VDS = 50 V, VGS = -8 V, F = 1 MHz
CRSS
-
0.2
-
pF
1. Exceeding any one or combination of these limits may cause permanent damage to this device
2. Junction temperature directly affects device MTTF. Junction temperature should be kept as low as possible to maximize lifetime.
3. For saturated performance it is recommended that the sum of (3*Vdd + abs(Vgg)) <175 V.
Absolute Maximum Ratings1, 2, 3
DC Characteristics
Parameter
Test Conditions
Symbol
Min.
Typ.
Max.
Units
Drain-Source Leakage Current
VGS = -8 V, VDS = 175 V
IDS
-
-
10.8
mA
Gate Threshold Voltage
VDS = 5 V, ID = 2 mA
VGS (TH)
-5
-3
-2
V
Forward Transconductance
VDS = 5 V, ID = 500 mA
GM
5.5
-
-
S
DC Characteristics


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