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STW38N65M5 Datasheet(PDF) 9 Page - STMicroelectronics

Part # STW38N65M5
Description  N-channel 650 V, 0.073, 30 A MDmesh V Power MOSFET
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW38N65M5 Datasheet(HTML) 9 Page - STMicroelectronics

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DocID022851 Rev 3
9/22
STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5
Electrical characteristics
Figure 14. Normalized gate threshold voltage vs
temperature
Figure 15. Normalized on-resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized VDS vs temperature
Figure 18. Switching losses vs gate resistance
(1)
1.
Eon including reverse recovery of a SiC diode.
ID = 250 µA
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
AM05459v1
VGS = 10 V
ID = 15 A
RDS(on)
1.7
1.3
0.9
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.7
1.1
1.5
1.9
2.1
AM05460v1
VSD
0
20
ISD(A)
(V)
10
50
30
40
0
0.2
0.4
0.6
0.8
1.0
1.2
TJ=-50°C
TJ=150°C
TJ=25°C
AM05461v1
VDS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.92
0.94
0.96
0.98
1.00
1.04
1.06
1.02
ID = 1mA
1.08
AM10399v1
E
300
200
100
0
0
20
RG(
Ω)
(
μJ)
10
30
400
500
600
40
ID=20A
VDD=400V
L=50µH
Eon
Eoff
AM12643v1


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