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STB38N65M5 Datasheet(PDF) 9 Page - STMicroelectronics |
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STB38N65M5 Datasheet(HTML) 9 Page - STMicroelectronics |
9 / 22 page DocID022851 Rev 3 9/22 STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized VDS vs temperature Figure 18. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode. ID = 250 µA VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 AM05459v1 VGS = 10 V ID = 15 A RDS(on) 1.7 1.3 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 AM05460v1 VSD 0 20 ISD(A) (V) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ=-50°C TJ=150°C TJ=25°C AM05461v1 VDS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 ID = 1mA 1.08 AM10399v1 E 300 200 100 0 0 20 RG( Ω) ( μJ) 10 30 400 500 600 40 ID=20A VDD=400V L=50µH Eon Eoff AM12643v1 |
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