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S1K-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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S1K-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page S1A, S1B, S1D, S1G, S1J, S1K, S1M www.vishay.com Vishay General Semiconductor Revision: 19-Aug-13 1 Document Number: 88711 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount Glass Passivated Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive, and telecommunication. MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end PRIMARY CHARACTERISTICS IF(AV) 1.0 A VRRM 50 V, 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V IFSM 40 A, 30 A EAS 5 mJ IR 1.0 μA, 5.0 μA VF 1.1 V TJ max. 150 °C Package DO-214AC (SMA) Diode variations Single die DO-214AC (SMA) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT Device marking code SA SB SD SG SJ SK SM Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current (fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 40 30 A Non-repetitive peak reverse avalanche energy at 25 °C, IAS = 1 A, L = 10 mH EAS 5mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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