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ELH0041G Datasheet(PDF) 2 Page - Elantec Semiconductor

Part No. ELH0041G
Description  0.1 Amp Power Operational Amplifier
Download  8 Pages
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Maker  ELANTEC [Elantec Semiconductor]
Homepage  http://www.elantec.com
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ELH0041G Datasheet(HTML) 2 Page - Elantec Semiconductor

   
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ELH0041G8838508701ZX
01 Amp Power Operational Amplifier
Absolute Maximum Ratings (T
A
e
25 C)
VS
Supply Voltage
g
18V
VIN
Input Voltage (Note 1)
g
15V
PD
Power Dissipation (See curves)
Differential Input Voltage
g
30V
Peak Output Current (Note 2)
05A
Output Short Circuit
Duration (Note 3)
Continuous
TA
Operating Temperature Range
ELH0041
b
55 Cto a125 C
TST
Storage Temperature
b
65 Cto a150 C
Lead Temperature
(Soldering 10 seconds)
300 C
Important Note
All parameters having MinMax specifications are guaranteed The Test Level column indicates the specific device testing actually
performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test
equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJeTCeTA
Test Level
Test Procedure
I
100% production tested and QA sample tested per QA test plan QCX0002
II
100% production tested at TA e 25 C and QA sample tested at TA e 25 C
TMAX and TMIN per QA test plan QCX0002
III
QA sample tested per QA test plan QCX0002
IV
Parameter is guaranteed (but not tested) by Design and Characterization Data
V
Parameter is typical value at TA e 25 C for information purposes only
DC Electrical Characteristics V
S
e g
15V TMIN s TA s TMAX CC e 3000 pF
Parameter
Description
Test Conditions
ELH0041
Units
Min
Typ
Max
Test
Level
VOS
Input Offset Voltage
RS s 100X TA e 25 C (Note 4)
1
3
I
mV
RS s 100X (Note 4)
5
I
mV
DVOS DT
Voltage Drift
RS s 100X
3V
mV C
with Temperature
Offset Voltage Drift
TA e 25 C
5V
mV
0wk
with Time
DVOS DP
Offset Voltage
Change with
15
V
mVW
Output Power
Offset Voltage
20
V
mV
Adjustment Range
IOS
Input Offset Current
TA e 25 C (Note 4)
30
100
I
nA
(Note 4)
300
I
nA
Offset Current Drift
01
1
IV
nA C
with Temperature
Offset Current Drift
TA e 25 C
2
V
nA
0wk
with Time
IB
Input Bias
TA e 25 C (Note 4)
100
300
I
nA
Current
(Note 4)
1
I
mA
RIN
Input Resistance
TA e 25 C
03
1
I
M
X
2


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