NE5820M53-T1 datasheet(2/8 Pages) CEL

Part #	NE5820M53-T1

Description	P-channel MOS Field Effect Transistor for Impedance Converter of Microphone

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Manufacturer	CEL [California Eastern Labs]

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NE5820M53

R09DS0005EJ0200 Rev.2.00

Page 2 of 6

May 20, 2011

ABSOLUTE MAXIMUM RATINGS (TA = +25

°C, unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Input Voltage

(IN-GND)

Vin

−0.8 to +0.8

V

Input Current

(IN-GND)

Iin

0.5

mA

Output Voltage

(OUT-GND)

Vout

−0.5 to +6

V

Output Current

(OUT-GND)

Iout

17

mA

Channel Temperature

Tch

130

°C

Operating Ambient Temperature

TA

−40 to +95

°C

Storage Temperature

Tstg

−65 to +150

°C

RECOMMENDED OPERATING RANGE (TA = +25

°C)

Parameter

Symbol

MIN.

TYP.

MAX.

Unit

Supply Voltage

Note

VDD

1.0

2.0

10.0

V

Note: RL = 15 k

Ω

ELECTRICAL CHARACTERISTICS

(TA = +25

°C, RL = 15 kΩ, unless otherwise specified)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Consumption Current

IDD

VDD = 2 V, Vin = 0 V

60

85

105

μA

Input Capacitance

Ciss

VDD = 2 V, f = 1 MHz

−

1.5

−

pF

Voltage Gain

GV

VDD = 2 V, Vin = 10 mVrms,

Cin = 3 pF, f = 1 kHz,

see TEST CIRCUIT

−4.5

−3.0

−

dB

Reduced Voltage Characteristics

ΔGVV

VDD = 2

→ 1.5 V, Vin = 10 mVrms,

Cin = 3 pF, f = 1 kHz,

see TEST CIRCUIT

−

0.3

−

dB

Frequency Characteristics

ΔGVf

VDD = 2 V, Vin = 10 mVrms,

Cin = 3 pF, f = 1 kHz

→ 110 Hz,

see TEST CIRCUIT

−

0.05

−

dB

Output Noise Voltage

NV

VDD = 2 V, Vin = 0 Vrms, Cin = 3 pF,

A-Curve,

see TEST CIRCUIT

−

−114

−

dBV

Total Harmonic Distortion

THD

VDD = 2 V, Vout = 30 mVrms,

Cin = 3 pF, f = 1 kHz,

see TEST CIRCUIT

−

0.1

−

%

TEST CIRCUIT

Voltage Gain, Frequency Characteristics, Output Noise Voltage, Total Harmonic Distortion

33 F

μ

15 k

Ω

Vin

3 pF

VDD

Vout

<R>

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