POWERDI is a registered trademark of Diodes Incorporated

DMP3008SFG

Document number: DS35598 Rev. 5 - 2

2 of 7

www.diodes.com

May 2012

© Diodes Incorporated

DMP3008SFG

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

Steady

State

-8.6

-7.0

A

t<10s

-11.7

-9.3

A

Steady

State

-7.1

-5.6

A

t<10s

-9.6

-7.6

A

Pulsed Drain Current (10

μs pulse, duty cycle = 1%)

-80

A

Maximum Continuous Body Diode Forward Current (Note 6)

-3.0

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

0.9

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

140

°C/W

t<10s

72

°C/W

Total Power Dissipation (Note 6)

2.2

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

57

°C/W

t<10s

30

°C/W

Thermal Resistance, Junction to Case (Note 6)

7.1

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

0.1

1

10

100

-V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

R

Limited

DS(on)

DC

P

= 10s

W

P

= 1s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

P

= 10 s

W

µ

T

= 150°C

T = 25°C

Single Pulse

J(max)

A

0

10

20

30

40

50

60

70

80

90

100

t1, PULSE DURATION TIME (sec)

Fig. 2 Single Pulse Maximum Power Dissipation

0.001 0.01

0.1

1

10

100

1,000

0.0001

Single Pulse

R

= 57 C/W

R

= r

* R

T - T = P * R

θ

θθ

θ

JA

JA(t)

(t)

JA

JA

JA(t)

°