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IR2011SPBF Datasheet(PDF) 1 Page - International Rectifier |
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IR2011SPBF Datasheet(HTML) 1 Page - International Rectifier |
1 / 17 page Features · Floating channel designed for bootstrap operation Fully operational up to +200V Tolerant to negative transient voltage, dV/dt immune · Gate drive supply range from 10V to 20V · Independent low and high side channels · Input logicHIN/LIN active high · Undervoltage lockout for both channels · 3.3V and 5V input logic compatible · CMOS Schmitt-triggered inputs with pull-down · Matched propagation delay for both channels · Also available LEAD-FREE (PbF) Packages HIGH AND LOW SIDE DRIVER Product Summary VOFFSET 200V max. IO+/- 1.0A /1.0A typ. VOUT 10 - 20V ton/off 80 & 60 ns typ. Delay Matching 20 ns max. IR2011(S) & (PbF) www.irf.com 1 Typical Connection (Refer to Lead Assignments for correct configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. Data Sheet No.PD60217 revB Applications · Audio Class D amplifiers · High power DC-DC SMPS converters · Other high frequency applications Description The IR2011 is a high power, high speed power MOSFET driver with independent high and low side referenced output channels, ideal for Audio Class D and DC-DC converter applications. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.0V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 volts. Propri- etary HVIC and latch immune CMOS technologies enable ruggedized monolithic con- struction. 8-Lead SOIC IR2011S 200V TO LOAD V CC COM LIN HIN V S V B HO HIN COM V CC LIN LO 1 8 4 5 8-Lead PDIP IR2011 |
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