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FT1500AU-240 Datasheet(PDF) 3 Page - Mitsubishi Electric Semiconductor

Part No. FT1500AU-240
Description  HIGH VOLTAGE, HIGH POWER, GENERAL USE DYNAMIC GATE, PRESS PACK TYPE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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FT1500AU-240 Datasheet(HTML) 3 Page - Mitsubishi Electric Semiconductor

   
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Feb.1999
MITSUBISHI GENERAL USE THYRISTORS
FT1500AU-240
HIGH VOLTAGE, HIGH POWER, GENERAL USE
DYNAMIC GATE, PRESS PACK TYPE
0
25
50
75
100
125
0
1500
500
1000
0
1500
500
1000
θ
360°
θ = 30°
60°
90° 120°
180°
0
2000
4000
6000
8000
10000
θ
360°
θ = 30°
60°
90°
180°
120°
0
2000
4000
6000
8000
10000
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
θ = 30°
60°
90°
120°
180°
270°
DC
θ
360°
0
25
50
75
100
175
125
150
θ = 30°
60°
270°
DC
120°
180°
90°
θ
360°
0
100
200
300
–40
20
100
180
–20
60
140
VD = 6V
RL = 2
2.0
1.0
0
140
–60
–20
20
60
100
3.0
VD = 6V
RL = 2
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
RESISTIVE,
INDUCTIVE
LOAD
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(SINGLE-PHASE HALF WAVE)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM ON-STATE POWER DISSIPATION
CHARACTERISTICS
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE FIN TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
(TYPICAL)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
(TYPICAL)
RESISTIVE,
INDUCTIVE
LOAD
DC METHOD
DC METHOD


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