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NE3520S03-T1C Datasheet(PDF) 2 Page - California Eastern Labs

Part # NE3520S03-T1C
Description  N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
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Manufacturer  CEL [California Eastern Labs]
Direct Link  http://www.cel.com
Logo CEL - California Eastern Labs

NE3520S03-T1C Datasheet(HTML) 2 Page - California Eastern Labs

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NE3520S03
R09DS0029EJ0100 Rev.1.00
Page 2 of 8
Oct 18, 2011
RECOMMENDED OPERATING RANGE (TA = +25
°C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
VDS
+1
+2
+3
V
Drain Current
ID
5
10
15
mA
Input Power
Pin
–
–
0
dBm
ELECTRICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Gate to Source Leak Current
IGSO
VGS = –3.0 V
–
0.5
10
μA
Saturated Drain Current
IDSS
VDS = 2 V, VGS = 0 V
25
40
70
mA
Gate to Source Cut-off Voltage
VGS (off)
VDS = 2 V, ID = 100 μA
–0.2
–0.7
–1.3
V
Transconductance
gm
VDS = 2 V, ID = 10 mA
50
65
–
mS
Noise Figure
NF
–
0.65
0.90
dB
Associated Gain
Ga
VDS = 2 V, ID = 10 mA, f = 20 GHz
11.5
13.5
–
dB


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