PS9332L, PS9332L2

Chapter Title

R08DS0105EJ0100 Rev.1.00

Page 5 of 18

Sep 06, 2013

ELECTRICAL CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,

Parameter

Symbol

Conditions

MIN.

TYP.

*1

MAX.

Unit

Forward Voltage

°C

1.35

1.56

1.75

V

Reverse Current

°C

10

Diode

Input Capacitance

25

°C

30

pF

− 4 V)

*2

0.5

1.5

High Level Output Current

− 15 V)

*3

1.5

A

*2

0.5

1.5

Low Level Output Current

*3

1.5

A

Clamp Output Peak

Current

0.5

1.6

A

Clamp Pin Threshold

Voltage

3.0

V

High Level Output Voltage

*4

V

Low Level Output Voltage

0.1

0.5

V

High Level Supply Current

1.5

2.5

mA

Low Level Supply Current

1.5

2.5

mA

10.8

12.4

13.4

UVLO Threshold Voltage

9.5

11.2

12.5

Detector

UVLO Hysteresis

1.2

V

Threshold Input Current

(L

→ H)

1.5

4.0

mA

Coupled

Threshold Input Voltage

(H

→ L)

0.8

V

°C.

*2. Maximum pulse width = 50

*3. Maximum pulse width = 10

= 20%)

SWITCHING CHARACTERISTICS (at RECOMMENDED OPERATING CONDITIONS,

Parameter

Symbol

Conditions

MIN.

TYP.

*1

MAX.

Unit

Propagation Delay Time (L

→ H)

75

200

ns

Propagation Delay Time (H

→ L)

110

200

ns

Pulse Width Distortion (PWD)

35

75

ns

Propagation Delay Time

(Difference Between Any Two

Products)

−90

90

ns

Rise Time

17

ns

Fall Time

f = 10 kHz,

Duty Cycle = 50%

17

ns

Common Mode Transient

Immunity at High Level Output

50

kV/

Common Mode Transient

Immunity at Low Level Output

50

kV/

°C.

*2. This load condition is equivalent to the IGBT load at 1 200 V/75 A.

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