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L6747C Datasheet(PDF) 11 Page - STMicroelectronics |
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L6747C Datasheet(HTML) 11 Page - STMicroelectronics |
11 / 15 page L6747C Device description and operation Doc ID 17127 Rev 1 11/15 MOSFET to reach the driving voltage (PVCC for HS and VCC for LS). This capacitor is charged and discharged at the driver switching frequency FSW. The total power PSW is dissipated among the resistive components distributed along the driving path. According to the external gate resistance and the power MOSFET intrinsic gate resistance, the driver dissipates only a portion of PSW as follows: The total power dissipated from the driver can then be determined as follows: Figure 6. Equivalent circuit for a MOSFET driver 4.5 Layout guidelines L6747C provides driving capability to implement high-current step-down DC-DC converters. The first priority when placing components for these applications should be given to the power section, minimizing the length of each connection and loop as much as possible. To minimize noise and voltage spikes (as well as EMI and losses) power connections must be part of a power plane, and in any case constructed with wide and thick copper traces. The loop must be minimized. The critical components, such as the power MOSFETs, must be close to each other. However, some space between the power MOSFETs is required to assure good thermal cooling and airflow. Traces between the driver and the MOSFETS should be short and wide to minimize the inductance of the trace, which in turn minimizes ringing in the driving signals. Moreover, the VIA count should be minimized to reduce the related parasitic effect. The use of a multi-layer printed circuit board is recommended. Small signal components and connections to critical nodes of the application, as well as bypass capacitors for the device supply, are also important. Place the bypass capacitor P SW HS – 1 2 --- C GHS PVCC 2 Fsw R hiHS R hiHS R GateHS R iHS ++ ---------------------------------------------------------------- R loHS R loHS R GateHS R iHS ++ ---------------------------------------------------------------- + ⎝⎠ ⎛⎞ ⋅⋅ ⋅ ⋅ = P SW LS – 1 2 --- C GLS VCC 2 Fsw R hiLS R hiLS R GateLS R iLS ++ -------------------------------------------------------------- R loLS R loLS R GateLS R iLS ++ -------------------------------------------------------------- + ⎝⎠ ⎛⎞ ⋅⋅ ⋅ ⋅ = PP DC P SW HS – P SW LS – ++ = RGATELS RILS CGLS VCC LS DRIVER LS MOSFET GND LGATE RGATEHS RIHS CGHS BOOT HS DRIVER HS MOSFET PHASE HGATE VCC |
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